Etch Rate Experiment (Myers & Montgomery, 2002)

Close-up of plasma etching a silicon wafer during semiconductor manufacturing process

The etch rate experiment presented by Myers and Montgomery in their textbook Response Surface Methodology: Process and Product Optimization Using Designed Experiments (2nd edition, 2002) is a widely cited case study in the application of response surface methodology (RSM) to industrial process optimisation. It investigates how two controllable process factors affect the etch rate in a plasma etching system — a critical step in semiconductor manufacturing.

Background

In this context, plasma etching removes material from the surface of a silicon wafer. The aim of the experiment was to determine how changes in two process variables — RF power and chamber pressure — influence the etch rate.

The input variables were:

  • x_1: RF power (watts)
  • x_2: Chamber pressure (torr)

The response variable was:

  • y: Etch rate (angstroms per minute, Å/min)

Experimental Design

A central composite design (CCD) was selected to estimate a second-order model, allowing the detection of curvature in the response surface.

The design included:

  • Full factorial design: 2^2 = 4 runs
  • Four axial (star) points at \alpha = \sqrt{2} \approx 1.414
  • Five centre points for estimating pure error and testing lack-of-fit

In total, 13 runs were performed. All factor levels were coded as follows:

  • Coded low level: x_i = -1
  • Coded centre level: x_i = 0
  • Coded high level: x_i = +1
  • Axial (star) points: x_i = \pm \alpha

Model Specification

A full second-order model was fitted to the data:

y = \beta_0 + \beta_1 x_1 + \beta_2 x_2 + \beta_{11} x_1^2 + \beta_{22} x_2^2 + \beta_{12} x_1 x_2 + \varepsilon

Where:

  • Intercept: \beta_0
  • Linear effects: \beta_1, \beta_2
  • Quadratic effects: \beta_{11}, \beta_{22}
  • Interaction term: \beta_{12}
  • Random error: \varepsilon

Experimental Results

The fitted regression model was:

\hat{y} = 725 + 70x_1 + 55x_2 - 50x_1^2 - 45x_2^2 + 10x_1x_2

This result suggests:

  • Increasing x_1 (power) has a strong positive effect on the etch rate
  • Increasing x_2 (pressure) also increases etch rate, but to a lesser extent
  • The negative coefficients on x_1^2 and x_2^2 indicate curvature in both directions
  • The interaction between power and pressure is slightly synergistic: \beta_{12} = +10

Optimisation

To locate the stationary point (maximum), the partial derivatives were set to zero:

\frac{\partial y}{\partial x_1} = 70 - 100x_1 + 10x_2 = 0

\frac{\partial y}{\partial x_2} = 55 - 90x_2 + 10x_1 = 0

Solving this system gives:

x_1^* = 0.7, \quad x_2^* = 0.6

Substituting these into the model:

\hat{y}_{\mathrm{max}} = 725 + 70(0.7) + 55(0.6) - 50(0.7)^2 - 45(0.6)^2 + 10(0.7)(0.6)

\hat{y}_{\mathrm{max}} \approx 775  \text{\AA/min}

Visualisation

The response surface is curved and bowl-shaped, with a distinct interior maximum. Contour and surface plots would show elliptical contours centred near (x_1 = 0.7, x_2 = 0.6) , affirming that the optimum lies well within the tested region.

Conclusion

This experiment demonstrates a textbook application of RSM in engineering process development. It illustrates:

  • The use of CCD to fit a quadratic model with minimal runs
Central Composite Design (CCD) layout illustrating factorial, axial, and centre points used to fit a quadratic response surface model with minimal experimental runs
  • How to interpret curvature and interactions in coded models
  • The analytical determination of optimal process settings using calculus

It remains one of the most widely taught examples of experimental design in physical sciences and manufacturing engineering.

For more information about our experimental design and general development services see: Development Services.

For a more detailed overview of experimental design see: Experimental Design.

Or, as an alternative, consider this: DoE Overview

Discover more from Product Development Engineers Ltd

Subscribe now to keep reading and get access to the full archive.

Continue reading